絲印：0101；Package：SOD882D；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

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絲?。?strong>0101；Package：SOT883B；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Low threshold voltage ? Very fast

文件：717.13 Kbytes 頁(yè)數(shù)：16 Pages

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絲?。?strong>0101；Package：SOT883B；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Low threshold voltage ? Very fast

文件：713.34 Kbytes 頁(yè)數(shù)：15 Pages

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絲?。?strong>0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

文件：677.99 Kbytes 頁(yè)數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/010100/marking.html">010100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

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絲印：010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

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絲?。?a target="_blank" title="Marking" href="/010101/marking.html">010101；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

文件：3.67584 Mbytes 頁(yè)數(shù)：23 Pages

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絲印：010111；Package：DFN1010D-3；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

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絲印：010111；Package：SOT1215；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

文件：3.67582 Mbytes 頁(yè)數(shù)：23 Pages

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絲?。?a target="_blank" title="Marking" href="/010110/marking.html">010110；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 500 mA output current capability ■ Reduced pick and place costs ■ Built

文件：2.34774 Mbytes 頁(yè)數(shù)：24 Pages

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