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絲?。?a target="_blank" title="Marking" href="/01001011/marking.html">01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits ? Leadless ultra small SMD plastic package ? Low package height of 0.37 mm ? Power dissipation comparable to SOT23 ? AEC-Q101 qualified

文件：462.56 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/01001011/marking.html">01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits ? Leadless ultra small SMD plastic package ? Low package height of 0.37 mm ? Power dissipation comparable to SOT23 ? AEC-Q101 qualified

文件：462.56 Kbytes 頁數(shù)：12 Pages

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絲印：01001011；Package：DFN1006B-3；65 V, 100 mA NPN general-purpose transistor

Features and benefits ? Leadless ultra small SMD plastic package ? Low package height of 0.37 mm ? Power dissipation comparable to SOT23 ? AEC-Q101 qualified

文件：462.56 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/010010/marking.html">010010；Package：DFN1010D-3；30 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. 2. Features and benefits ? Very low collector-

文件：743.72 Kbytes 頁數(shù)：17 Pages

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絲?。?a target="_blank" title="Marking" href="/01001001/marking.html">01001001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：842.86 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/01001010/marking.html">01001010；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Features and benefits ? 100 mA output current capability ? Reduces component count ? Built-in bias resistors ? Reduces pick and place costs ? Simplifies circuit design ? AEC-Q101 qualified ? Leadless ultra small SMD plastic package ? Low package height of 0.37 mm

文件：834.27 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/010011/marking.html">010011；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

Features and benefits ? 500 mA output current capability ? Built-in bias resistors ? ? 10 resistor ratio tolerance ? Simplifies circuit design ? Reduces component count ? Reduced pick and place costs ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of sold

文件：2.34705 Mbytes 頁數(shù)：24 Pages

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絲印：010011；Package：DFN1010D-3；50 V, 500 mA NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 500 mA output current capability ■ Reduced pick and place costs ■ Built

文件：2.34774 Mbytes 頁數(shù)：24 Pages

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絲印：01001000；Package：DFN1006B-3；40 V, 200 mA PNP switching transistor

General description PNP single switching transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904MB. Features and benefits ? Single general-purpose switching transistor ? AEC-Q101 qualified ? Ultra small SMD plastic pack

文件：254.17 Kbytes 頁數(shù)：11 Pages

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