30 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. Features and benefits ? Very low collector-

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恩XP

絲?。?a target="_blank" title="Marking" href="/010010/marking.html">010010；Package：DFN1010D-3；30 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. 2. Features and benefits ? Very low collector-

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NEXPERIA

安世

30 V, 1 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\nPNP complement: PBSS5130QA.Features and benefits\n? Very low collector-emitter satura

恩XP

30 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n PNP complement: PBSS5130QA. ? Very low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain hFE at high IC\n? High energy efficiency due to less heat generation\n? Reduced Printed-Circuit Board (PCB) area requirements\n? Solderable side pads\n? AEC-Q101 qual;

Nexperia

安世

Package：3-XDFN 裸露焊盤(pán)；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS NPN 30V 1A DFN1010D-3

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