絲?。?strong>01；Package：SOT-363；Dual N-Channel, Digital FET

General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especi

文件：226.61 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1 Features ? High precision, high speed light-to-digital conversion over high speed I2C interface in two package variants ? Precision optical filtering to closely match human eye with excellent near infrared (IR) rejection ? Semi-logarithmic output with 9 binary logarithmic full-scale light

文件：2.25217 Mbytes 頁數(shù)：54 Pages

TI

德州儀器

絲?。?strong>01；Package：PICOSTAR；OPT4001 High Speed, High Precision, Digital Ambient Light Sensor

1 Features ? High precision, high speed light-to-digital conversion over high speed I2C interface in two package variants ? Precision optical filtering to closely match human eye with excellent near infrared (IR) rejection ? Semi-logarithmic output with 9 binary logarithmic full-scale light

文件：2.25217 Mbytes 頁數(shù)：54 Pages

TI

德州儀器

絲?。?strong>01；Package：SC-75；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 頁數(shù)：17 Pages

NEXPERIA

安世

絲印：01；Package：SOT23；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 頁數(shù)：17 Pages

NEXPERIA

安世

絲?。?strong>01；Package：SC-70；PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Features and benefits * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * AEC-Q101 qualified

文件：1.5386 Mbytes 頁數(shù)：17 Pages

NEXPERIA

安世

絲印：01；Package：SOT1215；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Trench MOSFET technology ? Leadless ultra small and thin SMD p

文件：317.67 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?strong>01；Package：DO-214AC；Schottky Barrier Diode

●Features High reliability Small power mold type Low VF ●Application General rectification

文件：2.2359 Mbytes 頁數(shù)：8 Pages

ROHM

羅姆

絲?。?strong>01；Package：WQFN-14AL；6A, 18V, Synchronous Step-Down Converter

General Description The RT2856H is a high efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 6A output current from a 4.5V to 18V input supply. The RT2856H current-mode architecture with external compensation allows the transient response to be optimized over

文件：241.54 Kbytes 頁數(shù)：19 Pages

RICHTEK

立锜科技

絲?。?strong>01；0.5A Surface Mount Schottky Barrier Rectifiers

文件：103.41 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技