絲?。?strong>0011；Package：DFN1006B-3；Very low capacitance bidirectional ESD protection diodes

1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Fea

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絲?。?strong>0011；Package：SOD882D；0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

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絲?。?strong>0011；Package：SOT8001；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSFET

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絲印：001100；Package：DFN1010D-3；45 V, 500 mA PNP general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

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絲?。?a target="_blank" title="Marking" href="/001101/marking.html">001101；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits ? General-purpose transistors ? Three current gain selections ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? AEC-Q101 qualified

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絲印：001110；Package：DFN1010D-3；45 V, 100 mA PNP general-purpose transistors

Features and benefits ? General-purpose transistors ? Three current gain selections ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? AEC-Q101 qualified

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絲?。?a target="_blank" title="Marking" href="/001111/marking.html">001111；Package：SOT1215；45 V, 100 mA PNP general-purpose transistors

Features and benefits ? General-purpose transistors ? Three current gain selections ? Low package height of 0.37 mm ? Suitable for Automatic Optical Inspection (AOI) of solder joint ? AEC-Q101 qualified

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絲?。?a target="_blank" title="Marking" href="/00110000/marking.html">00110000；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲?。?a target="_blank" title="Marking" href="/00110011/marking.html">00110011；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

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絲?。?a target="_blank" title="Marking" href="/00110111/marking.html">00110111；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 22 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ R

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