絲印：ZTA；Package：DO-214AC；Surface Mount Transient Voltage Suppressors

Features ● Glass passivated chip ● 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 % ● High reliability application and automotive grade ● AEC Q101 qualified ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Ver

文件：1.32281 Mbytes 頁(yè)數(shù)：3 Pages

LUGUANG

魯光電子

絲?。?strong>ZTA；Package：DO-214AC；10 To 85V 400W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 400W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.87185 Mbytes 頁(yè)數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>ZTA；Package：DO-214AC；Transient Voltage Suppressors

400 W peak pulse power capability with a 10/ 1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant High reliability application and automotive grade AEC-Q101 qualified Features

文件：1.22384 Mbytes 頁(yè)數(shù)：4 Pages

LUGUANG

魯光電子

絲?。?strong>ZTA；Package：DO-214AC；Surface Mount Transient Voltage Suppressors

文件：348.57 Kbytes 頁(yè)數(shù)：3 Pages

ANOVA

林朋科技

絲?。?a target="_blank" title="Marking" href="/zta06/marking.html">ZTA06；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current General Purpose Amplifier Applications

文件：1.81454 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/zta42/marking.html">ZTA42；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

文件：1.77036 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/zta42/marking.html">ZTA42；Package：SOT-223；Plastic-Encapsulate Transistors

FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)

文件：784.94 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/zta42/marking.html">ZTA42；Package：SOT-223；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ? High breakdown voltage ? Low collector-emitter saturation voltage ? Complementary type: PZTA92(PNP)

文件：345.07 Kbytes 頁(yè)數(shù)：3 Pages

FS

絲?。?a target="_blank" title="Marking" href="/zta42/marking.html">ZTA42；Package：SC-73；NPN high voltage transistor

1. General description NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: PZTA92-Q 2. Features and benefits ? Low current (max. 100 mA) ? High voltage (max. 300 V) ? Qualified according to AEC-Q101 and recommended for use in automotive app

文件：186.87 Kbytes 頁(yè)數(shù)：7 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/zta44/marking.html">ZTA44；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low current : 300mA(max) High voltage: VCEO=400V

文件：1.76064 Mbytes 頁(yè)數(shù)：4 Pages

DGNJDZ

南晶電子