The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A

文件：200.01 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

Fuseholders - For 3AG, 5 x 20mm, or 2AG Fuses

文件：114.48 Kbytes 頁數(shù)：1 Pages

LITTELFUSE

力特

Multi-turn Hall-Effect Position Sensor

? Multi-turn: All electrical angles available up to 3600° ? Non-contact Hall Effect technology ? Compact 25mm diameter size ? Wide temperature range (-40~125°C) ? Life cycle: 10M rotations ? Dust & water resistant (IP 67) Applications ? Control valve position feedback ? Actuator motor po

文件：672.16 Kbytes 頁數(shù)：4 Pages

CTS

西迪斯

Wiha TorqueControl Blades - For Easy Torque, TorqueFix & TorqueVario Handles

文件：104.98 Kbytes 頁數(shù)：1 Pages

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