絲?。?strong>XQ；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 頁數(shù)：5 Pages

SUNMATE

森美特

絲?。?strong>XQ；Package：SC-59；NPN general purpose transistor

FEATURES ?High current (max. 500 mA) ?Low voltage (max. 50 V).

文件：286.13 Kbytes 頁數(shù)：7 Pages

NEXPERIA

安世

絲?。?strong>XQ；Package：SOD110；Voltage regulator diodes

FEATURES ?Total power dissipation: max. 400 mW ?Two tolerance series: ±2 and ±5 ?Working voltage range: nom. 2.4 to 75 V (E24 range). APPLICATIONS ?General regulation functions. DESCRIPTION Low-power voltage regulator diodes in a SOD110 very small ceramic SMD package. The diodes are ava

文件：892.96 Kbytes 頁數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>XQ；Package：SOD-110；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The diodes are available in the normalized E24 ±2 (BZX284-B) and ±5 (BZX284-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. FEATURES ? Total power dissipati

文件：57.95 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲?。?strong>XQ；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 400W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.34 Kbytes 頁數(shù)：6 Pages

WTE

Won-Top Electronics

絲?。?strong>XQ；Package：SOT23；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Low threshold voltage ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology

文件：291.79 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?strong>XQ；Package：SOT-346T；Nch 30V 3.5A Middle Power MOSFET

Features 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) 4) Pb-free lead plating ; RoHS compliant Application Switching

文件：1.50528 Mbytes 頁數(shù)：14 Pages

ROHM

羅姆

絲印：XQ；Package：TSMT6；4V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：1.28159 Mbytes 頁數(shù)：7 Pages

ROHM

羅姆

絲印：XQ；Package：TSMT3；4V Drive Nch MOSFET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

文件：1.22167 Mbytes 頁數(shù)：7 Pages

ROHM

羅姆

絲?。?strong>XQ；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.19459 Mbytes 頁數(shù)：5 Pages

SUNMATE

森美特