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          首頁 >XP100>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          XP1005-BD-000V

          35.0-43.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT devi

          文件:281.72 Kbytes 頁數(shù):7 Pages

          MIMIX

          XP1005-BD-EV1

          35.0-43.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT devi

          文件:281.72 Kbytes 頁數(shù):7 Pages

          MIMIX

          XP1006

          8.5-11.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

          文件:242.87 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1006-BD

          8.5-11.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

          文件:225.73 Kbytes 頁數(shù):8 Pages

          MIMIX

          XP1006-BD-000V

          8.5-11.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

          文件:225.73 Kbytes 頁數(shù):8 Pages

          MIMIX

          XP1006-BD-EV1

          8.5-11.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is base

          文件:225.73 Kbytes 頁數(shù):8 Pages

          MIMIX

          XP1006-FA

          8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

          文件:228.2 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1006-FA-0N00

          8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

          文件:228.2 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1006-FA-EV1

          8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin

          General Description Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ens

          文件:228.2 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1008

          11.0-16.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to

          文件:160 Kbytes 頁數(shù):6 Pages

          MIMIX

          技術參數(shù)

          • 包裝:

            托盤

          • 零件狀態(tài):

            在售

          • 模塊/板類型:

            MPU ??

          • 核心處理器:

            DSTni-EX

          • 協(xié)處理器:

            XPort AR

          • 速度:

            25MHz

          • 閃存大?。?/span>

            512KB

          • RAM 大?。?/span>

            256KB

          • 連接器類型:

            RJ45

          • 大小 / 尺寸:

            0.57\ x 0.72\(14.5mm x 18.3mm)

          • 工作溫度:

            -40°C ~ 85°C

          供應商型號品牌批號封裝庫存備注價格
          ELMOS
          10+
          DIP24
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價
          LAX
          24+
          10
          詢價
          M/A-COM
          24+
          SMD
          1680
          M/A-COM專營品牌進口原裝現(xiàn)貨假一賠十
          詢價
          LANTRON
          10+
          module
          14420
          只做原廠原裝,認準寶芯創(chuàng)配單專家
          詢價
          LANTRON
          1902+
          module
          2734
          代理品牌
          詢價
          MIMIX
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          MIMIX
          638
          原裝正品
          詢價
          Lantronix, Inc.
          24+
          -
          53200
          一級代理/放心采購
          詢價
          M/A-COM
          2447
          20
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          M/A-COM
          6698
          詢價
          更多XP100供應商 更新時間2026-1-19 11:04:00
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