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          首頁 >XP1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          XP1009

          17.0-21.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

          文件:145.4 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1010

          21.0-24.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

          文件:170.32 Kbytes 頁數(shù):7 Pages

          MIMIX

          XP1011

          36.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to

          文件:156.95 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1011-BD

          36.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography t

          文件:156.51 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1011-BD-000V

          36.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography t

          文件:156.51 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1011-BD-000W

          36.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography t

          文件:156.51 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1011-BD-EV1

          36.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography t

          文件:156.51 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1012

          37.0-40.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

          文件:158.51 Kbytes 頁數(shù):6 Pages

          MIMIX

          XP1013

          17.0-26.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

          文件:1.5436 Mbytes 頁數(shù):7 Pages

          MIMIX

          XP1013-BD

          17.0-26.0 GHz GaAs MMIC Power Amplifier

          General Description Mimix Broadband’s three stage 17.0-26.0 GHz GaAs MMIC power amplifier has a small signal gain of 20.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure

          文件:466.12 Kbytes 頁數(shù):7 Pages

          MIMIX

          晶體管資料

          • 型號(hào):

            XP1101

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-N/P+R

          • 性質(zhì):

            表面帖裝型 (SMD)_開關(guān)管 (S)_差分放大器射極輸

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            40V

          • 最大電流允許值:

            0.03A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            5

          • 可代換的型號(hào):

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號(hào):

            H-21

          • vtest:

            40

          • htest:

            999900

          • atest:

            0.03

          • wtest:

            0

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            XP1

          • 制造商:

            Advanced Energy

          • 類別:

            電源 - 外部/內(nèi)部(板外) > 配件

          • 系列:

            powerMods

          • 包裝:

          • 配件類型:

            并行輸出鏈路

          • 配套使用/相關(guān)產(chǎn)品:

            powerMods

          • 描述:

            PARALLEL OUTPUT LINK FOR PWRMODS

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          ExcelsysTechnologies
          247
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          00/01+
          SOP5
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          17+
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          6200
          100%原裝正品現(xiàn)貨
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          PANASONIC
          24+
          原廠封裝
          3000
          原裝現(xiàn)貨假一罰十
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          2016+
          SOT23
          6721
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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          更多XP1供應(yīng)商 更新時(shí)間2026-1-17 16:06:00
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