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    首頁
                >絲印反查>X28C010DM
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    X28C010DM
    絲?。?strong>X28C010DM；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM-12
    絲?。?a target="_blank" title="Marking" href="/x28c010dm-12/marking.html">X28C010DM-12；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM-15
    絲印：X28C010DM-15；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM
    絲?。?strong>X28C010DM；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM-12
    絲?。?a target="_blank" title="Marking" href="/x28c010dm-12/marking.html">X28C010DM-12；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM-15
    絲?。?a target="_blank" title="Marking" href="/x28c010dm-15/marking.html">X28C010DM-15；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DMB-12
    絲?。?a target="_blank" title="Marking" href="/cx28c010dmb-12/marking.html">CX28C010DMB-12；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DMB-15
    絲印：CX28C010DMB-15；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DMB-20
    絲印：CX28C010DMB-20；5V, Byte Alterable EEPROM
    
Features
? Access time: 120ns
? Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
? No erase before write
? No complex programming algorithms
? No overerase problem
? Low power CMOS
- Active: 50mA
- Standby: 500μA
? Software
    文件：823.93 Kbytes 頁數(shù)：20 Pages
    RENESAS
    瑞薩
    

    X28C010DM
    Protects data against system level inadvertent writes
    
The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM, fabricated with Intersils proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable non-volatile memories, the X28C010/X28HT010 is a 5V only device. The X28C010/X28HT010 features the JEDEC approved pin out for b
    文件：446.1 Kbytes 頁數(shù)：20 Pages
    INTERSIL
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號(hào)：
      X28C010DM
    • 制造商：
      INTERSIL 
    • 制造商全稱：
      Intersil Corporation 
    • 功能描述：
      5V, Byte Alterable EEPROM 
    
            
    
        
    
            
    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    
                
    



    XICOR
    		

    1430+
    		

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    5800
    		

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詢價(jià)
    

    



    XIC
    		

    24+/25+
    		

    		

    5
    		

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    XICOR
    		

    24+
    		

    CDIP
    		

    25
    		

    		
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    XICOR
    		

    25+
    		

    DIP-32
    		

    60
    		

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    XICOR
    		

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    INTERSIL
    		

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    XICOR
    		

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    XICOR
    		

    1824+
    		

    DIP32
    		

    4000
    		

    原裝現(xiàn)貨專業(yè)代理,可以代拷程序
    		
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    XICOR
    		

    24+
    		

    DIP
    		

    66800
    		

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    XICOR
    		

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    65480
    		

    		
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    更多X28C010DM供應(yīng)商
            更新時(shí)間2026-1-22 11:04:00
        
    
        
    
          
    
            
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