絲?。?strong>WZ；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 頁(yè)數(shù)：5 Pages

SUNMATE

森美特

絲?。?strong>WZ；Package：TSLP-3-4；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor ? Switching circuit, inverter, interface circuit, driver circuit ? Built in bias resistor (R1=22k?, R2=47k?)

文件：195.95 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

絲印：WZ；Package：SOT-523；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor ? Switching circuit, inverter, interface circuit, driver circuit ? Built in bias resistor (R1=22k?, R2=47k?)

文件：195.95 Kbytes 頁(yè)數(shù)：8 Pages

INFINEON

英飛凌

絲?。?strong>WZ；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 頁(yè)數(shù)：16 Pages

ROHM

羅姆

絲?。?strong>WZ；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 頁(yè)數(shù)：4 Pages

ROHM

羅姆

絲?。?strong>WZ；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：218.05 Kbytes 頁(yè)數(shù)：6 Pages

ROHM

羅姆

絲?。?strong>WZ；Package：SOD-110；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes in a small ceramic SMD SOD110 package. The diodes are available in the normalized E24 ±2 (BZX284-B) and ±5 (BZX284-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. FEATURES ? Total power dissipati

文件：57.95 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

絲?。?strong>WZ；Package：SOD110；Voltage regulator diodes

FEATURES ?Total power dissipation: max. 400 mW ?Two tolerance series: ±2 and ±5 ?Working voltage range: nom. 2.4 to 75 V (E24 range). APPLICATIONS ?General regulation functions. DESCRIPTION Low-power voltage regulator diodes in a SOD110 very small ceramic SMD package. The diodes are ava

文件：892.96 Kbytes 頁(yè)數(shù)：11 Pages

NEXPERIA

安世

絲?。?strong>WZ；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 410 mWatts FEATURES ? Planar Die construction ? 410mW Power Dissipation ? Zener Voltages from 2.4~75V ? Ideally Suited for Automated Assembly Processes ? Acqire quality system certificate : TS16949 ? AEC-Q10

文件：292.47 Kbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲?。?strong>WZ；Package：TSMT3；4V Drive Pch MOS FET

4V Drive Pch MOS FET Features 1) Low On-resistance 2) Space saving?small surface mount package (TSMT3) 3) 4V drive Applications Switching Structure Silicon P-channel MOS FET

文件：66.62 Kbytes 頁(yè)數(shù)：3 Pages

ROHM

羅姆