絲印：WT-***；Package：SOT-25；1.25MHz, 600mA, High Efficiency PWM Step-Down DC/DC Converter

General Description The RT8009 is a high-efficiency pulse-width-modulated (PWM) step-down DC-DC converter. Capable of delivering 600mA output current over a wide input voltage range from 2.5 to 5.5V, the RT8009 is ideally suited for portable electronic devices that are powered from 1-cell Li-io

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Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS(ON)

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Surface Mount P-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS(ON)

文件：157.18 Kbytes 頁數(shù)：6 Pages

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Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS (ON) RDS

文件：171.85 Kbytes 頁數(shù)：6 Pages

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Surface Mount P-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS

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Surface Mount P-Channel Enhancement Mode MOSFET

Features: *Super high dense cell design for low RDS(ON) GS =-10V RDS(ON) GS =-4.5V *Rugged and Reliable *SOT-23 Package

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Surface Mount N-Channel Enhancement Mode MOSFET

Features: * Super high dense cell design for low RDS(ON) RDS(ON)

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Zener Diode Chips for ESD Protection

Zener Diode Chips for ESD Protection Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specication applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 Structure: 2-1 Planar type: P/N Diode 2-2 Electrodes:

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Zener Diode Chips for ESD Protection

Feature: 1-1 Silicon Zener diode chips for electrostatic discharge (ESD) protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 Structure: 2-1 Planar type: N/P Diode 2-2 Electrodes: Top side:Gold Pad.(Cathode) Back side:Gold L

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Zener Diode Chips for ESD Protection

Feature: 1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 Structure: 2-1 Planar type: Silicon Diode 2-2 Electrodes: Top side:Aluminum Alloy(Anode). Back side

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