GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz

The WST4200D is a gallium nitride (GaN) high electron mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density ·17 dB Small Signal Gain at 4 GHz\n·30 W PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

ARM? Cortex?-M4 32-bit processor core

Summary of Features The XMC4[12]00 devices are members of the XMC4000 Family of microcontrollers based on the ARM Cortex-M4 processor core. The XMC4000 is a family of high performance and energy efficient microcontrollers optimized for Industrial Connectivity, Industrial Control, Power Conver

文件：2.56369 Mbytes 頁數(shù)：93 Pages

INFINEON

英飛凌

Microcontroller Series for Industrial Applications

ARM? Cortex?-M4 32-bit processor core Microcontroller Series for Industrial Applications XMC4000 Family Summary of Features The XMC4[12]00 devices are members of the XMC4000 Family of microcontrollers based on the ARM Cortex-M4 processor core. The XMC4000 is a family of high performance and e

文件：1.69531 Mbytes 頁數(shù)：94 Pages

INFINEON

英飛凌

Inductive Position Sensor IC

Features ■ Position sensing based on inductive principle ■ Cost effective; no magnet required ■ Immune to magnetic stray fields; no shielding required ■ Suitable for harsh environments and extreme temperatures ■ Only three wires (ground, supply, output) ■ Nonvolatile user memory; programmi

文件：1.01838 Mbytes 頁數(shù)：26 Pages

RENESAS

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