HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：19.16 Kbytes 頁數(shù)：2 Pages

STMICROELECTRONICS

意法半導體

HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：54.27 Kbytes 頁數(shù)：7 Pages

STMICROELECTRONICS

意法半導體

MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM

GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSIs patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57

文件：19.16 Kbytes 頁數(shù)：2 Pages

STMICROELECTRONICS

意法半導體