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                >WS1A3640>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          WS1A3640
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640
          39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
          The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply  ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01;
          MACOM
          

          WS1A3640V2-01
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640V2-02
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640V2-03
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640V2-08
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640-V2-R00A
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640-V2-R1
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640-V2-R3K
          GaN on SiC Power Amplifier Module for 5G
          
Description
The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with
matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been
designed to operate from 3300 MHz t
          文件：422.7 Kbytes 頁數(shù)：7 Pages
          WOLFSPEED
          

          WS1A3640-V1-R3K
          39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
          The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply  ·Gate bias supplies for main and peaking sub-amplifiers from either side of the device\n·GaN-on-SiC technology\n·Integrated harmonic terminations\n·Pb-free and RoHS compliant\n·Recommended driver is the WSGPA01;
          MACOM
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Min Frequency (MHz)：
            3300
          • Max Frequency(MHz)：
            3800
          • P3dB Output Power(W)：
            60
          • Gain(dB)：
            13.5
          • Efficiency(%)：
            52
          • Operating Voltage(V)：
            48
          • Package Category：
            Surface Mount
          • Form：
            Packaged Discrete Transistor
          • Technology：
            GaN-on-SiC
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



          MACOM
          		

          24+
          		

          		

          5000
          		

          原裝軍類可排單
          		
詢價
          

          



          SAMWH
          		

          2022+
          		

          DIP
          		

          51200
          		

          原廠代理 終端免費提供樣品
          		
詢價
          

          



          Bourns
          		

          22+
          		

          NA
          		

          5889
          		

          加我QQ或微信咨詢更多詳細信息,
          		
詢價
          

          



          		

          24+
          		

          N/A
          		

          70000
          		

          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          		
詢價
          

          



          BOURNS
          		

          25+
          		

          插件
          		

          22360
          		

          樣件支持,可原廠排單訂貨!
          		
詢價
          

          



          		

          23+
          		

          		

          65480
          		

          		
詢價
          

          



          Bourns
          		

          2022+
          		

          原廠原包裝
          		

          6800
          		

          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          		
詢價
          

          



          BOURNS
          		

          25+
          		

          插件,D4.5xL9.5mm
          		

          21000
          		

          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          		
詢價
          

          



          BOURNS/伯恩斯
          		

          23+
          		

          		

          11200
          		

          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          		
詢價
          

          



          WHITE
          		

          QQ咨詢
          		

          QFP
          		

          112
          		

          全新原裝 研究所指定供貨商
          		
詢價
          

            
          
        
          
        
          更多WS1A3640供應(yīng)商
            更新時間2026-1-21 14:16:00
        
          
        
          
          
          
            
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