| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
WFF | Fast Fusible Metal Film Resistors ? Low power fusing ? Predictable fusing characteristics ? Flameproof protection 文件：465.54 Kbytes 頁(yè)數(shù)：3 Pages | TTELEC | TTELEC | |
WFF | Fast Fusible Metal Film Resistors 文件：90.1 Kbytes 頁(yè)數(shù)：3 Pages | WELWYN | WELWYN | |
Fast Fusible Metal Film Resistors ? Low power fusing ? Predictable fusing characteristics ? Flameproof protection 文件：465.54 Kbytes 頁(yè)數(shù)：3 Pages | TTELEC | TTELEC | ||
Fast Fusible Metal Film Resistors ? Low power fusing ? Predictable fusing characteristics ? Flameproof protection 文件：465.54 Kbytes 頁(yè)數(shù)：3 Pages | TTELEC | TTELEC | ||
Fast Fusible Metal Film Resistors ? Low power fusing ? Predictable fusing characteristics ? Flameproof protection 文件：465.54 Kbytes 頁(yè)數(shù)：3 Pages | TTELEC | TTELEC | ||
N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.) □ BVDSS=600V,ID=2A □ RDS(on): 5 ?(Max) @VG=10V □ 100 Avalanche Tested 文件：714.75 Kbytes 頁(yè)數(shù)：7 Pages | WISDOM | WISDOM | ||
Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficien 文件：396.2 Kbytes 頁(yè)數(shù)：7 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | WINSEMI | ||
N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 15nC (Typ.) □ BVDSS=600V,ID=4A □ RDS(on) :2.3 ? (Max) @VG=10V □ 100 Avalanche Tested 文件：743.23 Kbytes 頁(yè)數(shù)：7 Pages | WISDOM | WISDOM | ||
N-Channel MOSFET General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching 文件：845.38 Kbytes 頁(yè)數(shù)：7 Pages | WISDOM | WISDOM | ||
Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi’s advanced planarstripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency s 文件：470.43 Kbytes 頁(yè)數(shù)：7 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | WINSEMI |
技術(shù)參數(shù)
- Type：
N
- VDSS(V)：
650
- ID(A)?：
10
- ?VGSS(V)(+/-)：
30
- Rds（on）@Vg Typ.(Ω)/Max.(Ω)：
0.75/0.85
- Vgs(th) Min.(V)/Typ.(V)/Max.(V)：
2/3/4
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
WISDOM |
23+ |
TO-220 |
1500 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢(xún)價(jià) | ||
WISDOM |
24+ |
TO-220F |
24000 |
詢(xún)價(jià) | |||
WINSEMI |
11+ |
TO-220 |
6000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨 |
詢(xún)價(jià) | ||
WINSEMI |
2016+ |
TO-220F |
3900 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
Wisdom |
17+ |
TO-220F |
6200 |
詢(xún)價(jià) | |||
WISDOM |
05+ |
原廠原裝 |
3654 |
全新原裝 絕對(duì)有貨 |
詢(xún)價(jià) | ||
WISDOM |
23+ |
TO-220F |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
tos |
25+ |
TO-220 |
3930 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
威士頓 |
24+ |
TO220F |
5000 |
只做原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
Weidmvl |
23+ |
DIP |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) |
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