絲?。?strong>WC；Package：TSLP-3-4；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor ? Switching in circuit, inverter, interface circuit, drive circuit ? Built in bias resistor (R1 = 10 k?, R2 = 10 k?) ? For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

文件：490.62 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?strong>WC；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?strong>WC；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 頁數(shù)：16 Pages

ROHM

羅姆

絲印：WC；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：218.05 Kbytes 頁數(shù)：6 Pages

ROHM

羅姆

絲?。?strong>WC；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

FEATURES ? Planar Die construction ? 410mW Power Dissipation ? Zener Voltages from 2.4~75V ? Ideally Suited for Automated Assembly Processes ? In compliance with EU RoHS 2002/95/EC directives

文件：81.93 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

絲?。?strong>WC；Package：SOD-323；Surface Mount Silicon Zener Diodes

FEATURES ● Ideally suited for automated assembly processes. ● Total power dissipation: Max. 200mW

文件：766.12 Kbytes 頁數(shù)：2 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲印：WC；Package：SOD-123；SURFACE MOUNT ZENER DIODE

Features ? Planar Die Construction ? 500mW Power Dissipation ? General Purpose, Medium Current ? Ideally Suited for Automated Assembly Processes ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Notes 3 & 4) ? Qualified to AEC-

文件：122.25 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>WC；Package：SOD-123；SURFACE MOUNT ZENER DIODE

Features ? Planar Die Construction ? 500mW Power Dissipation ? General Purpose, Medium Current ? Ideally Suited for Automated Assembly Processes ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Notes 3 & 4) ? Qualified to AEC-

文件：73.25 Kbytes 頁數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>WC；Package：SOD-123；SURFACE MOUNT ZENER DIODE

Features ? Planar Die Construction ? 500mW Power Dissipation ? General Purpose, Medium Current ? Ideally Suited for Automated Assembly Processes ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Notes 3 & 4) ? Qualified to AEC-

文件：79.14 Kbytes 頁數(shù)：3 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>WC；Package：SOD-323；Plastic-Encapsulate Zener Diode

Features ● Low Zener Impedance ● 200mW; Power Dissipation of 200mW ● High Stability and High Reliability

文件：1.11124 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子