32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 頁(yè)數(shù)：160 Pages

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華邦電子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 頁(yè)數(shù)：160 Pages

WINBOND

華邦電子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 頁(yè)數(shù)：160 Pages

WINBOND

華邦電子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 頁(yè)數(shù)：160 Pages

WINBOND

華邦電子

32M X 8 BANKS X 8 BIT DDR3L SDRAM

文件：3.41979 Mbytes 頁(yè)數(shù)：160 Pages

WINBOND

華邦電子

雙倍數(shù)據(jù)傳輸速率同步動(dòng)態(tài)隨機(jī)存取內(nèi)存-3rd generation(第三代)

The W632GG6KB is a 2G bits DDR3 SDRAM and speed involving -11, -12, 12I, -15 and 15I ?Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V \n? Double Data Rate architecture: two data transfers per clock cycle \n? Eight internal banks for concurrent operation \n? 8 bit prefetch architecture \n? CAS Latency: 6, 7, 8, 9, 10, 11 and 13 \n? Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed v;

Winbond

華邦電子

雙倍數(shù)據(jù)傳輸速率同步動(dòng)態(tài)隨機(jī)存取內(nèi)存-3rd generation(第三代)

The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J. ?Power Supply: VDD, VDDQ = 1.5V±0.075V\n? Eight internal banks for concurrent operation\n? CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14\n? Programmable read burst ordering: interleaved or nibble sequential\n? Edge-aligned with read data and center-aligned with write data\n? Differential clock input;

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IC DRAM 2G PARALLEL 1066MHZ

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包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 2GBIT PARALLEL 667MHZ

Winbond Electronics

Package：96-TFBGA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 2GBIT PARALLEL 96WBGA

Winbond Electronics