Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 ? AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 ? Material categorization: for definiti

文件：128.81 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

文件：128.169 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 ? AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 ? Material categorization: for definiti

文件：128.81 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.47 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 170V 60A TO247AD

Vishay General Semiconductor - Diodes Division

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：60A,170V,TRENCH SCHOTTKY RECT.

Vishay General Semiconductor - Diodes Division