絲印：VTT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

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.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices

文件：22.92 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices

文件：22.92 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices

文件：22.92 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are s

文件：23.4 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are s

文件：23.4 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are s

文件：23.4 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.040 NPN Phototransistors

PRODUCT DESCRIPTION A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.

文件：21.48 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.040 NPN Phototransistors

PRODUCT DESCRIPTION A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted in a lensed, end looking, transparent plastic package. These devices are spectrally and mechanically matched to the VTE12xx series of IREDs.

文件：21.48 Kbytes 頁數(shù)：1 Pages

PERKINELMER

.025 NPN Phototransistors

PRODUCT DESCRIPTION A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (θ1/2) of 40°. These devices are spectrally and mechanically matched to the VTE12xxW ser

文件：22.87 Kbytes 頁數(shù)：1 Pages

PERKINELMER