Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

文件：200.29 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件：141.95 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

文件：200.29 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Vishay

威世

整流器 7.5A,60V,SINGLE TRENCH SKY RECT.

Vishay

威世

Package：TO-220-2；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 7.5A 60V TO-220AC

Vishay General Semiconductor - Diodes Division