| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VT3045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to I 文件：125.2 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VT3045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：140.82 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件：140.82 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay 文件：137.11 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay. 文件：122.62 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay 文件：137.11 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay. 文件：122.62 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to I 文件：139.07 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to I 文件：139.07 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier 文件：128.16 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號：
VT3045C
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
17+ |
TO220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
23+ |
TO-220 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
GENERALSEMICONDUCTORVISHAY |
24+ |
NA |
1000 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價(jià) | ||
VISHAY |
25+ |
TO-220 |
30000 |
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢 |
詢價(jià) | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
GENERALSEMICONDUCTORVISHAY |
21+ |
NA |
1000 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價(jià) | ||
VISHAY |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) | ||
VISHAY |
21+ |
標(biāo)準(zhǔn)封裝 |
15000 |
進(jìn)口原裝,訂貨渠道! |
詢價(jià) |
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相關(guān)庫存
更多- VT3045C-M3/4W
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- VTH4R7M250
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- VTL1000S16A
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