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    首頁(yè) >VSM>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    VSM

    High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of ± 2 ppm/°C and Load Life Stability of ± 0.01 (100 ppm)

    文件:131.25 Kbytes 頁(yè)數(shù):4 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSM

    VSM Series Micro Sensors

    文件:656.57 Kbytes 頁(yè)數(shù):7 Pages

    BANNER

    邦納電子

    VSMA1085250

    High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1085250 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:199.27 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1085250_V01

    High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1085250 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:199.27 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1085600

    High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1085600 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:192 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1085600_V01

    High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1085600 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:192 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1094250

    High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1094250 is an infrared, 940 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:199.53 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1094250_V01

    High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1094250 is an infrared, 940 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:199.53 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1094400

    High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1094400 is an infrared, 940 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:194.19 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    VSMA1094400_V01

    High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

    DESCRIPTION As part of the SurfLightTM portfolio, the VSMA1094400 is an infrared, 940 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. FEATURES ? Package type: sur

    文件:194.19 Kbytes 頁(yè)數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    技術(shù)參數(shù)

    • BVDSS[V]:

      60.00

    • bVGS[V]:

      20.00

    • vth_min:

      1.30

    • vth_max:

      2.40

    • ID[A]:

      180.00

    • PD[W]:

      214.00

    • RDS (on) Typ[mR]@10V:

      2.20

    • RDS (on) Typ[mR]@4.5V:

      3.30

    • RDS (on) Typ[mR]@2.5V:

      0.00

    • RDS (on) Typ[mR]@1.8V:

      0.00

    • Ciss:

      3180.00

    • Coss:

      895.00

    • Crss:

      30.00

    • Qg(10V)[nC]:

      52.00

    • Qg(4.5V)[nC]:

      26.00

    • Package:

      TO-263

    • Technology:

      SGT

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    VISHAY
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    更多VSM供應(yīng)商 更新時(shí)間2026-1-22 10:21:00

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