N-Channel Mosfet

? N-Channel\n? Enhancement mode\n? Very low on-resistance RDS(on) @ VGS=4.5 V \n? Fast Switching\n●100% Avalanche Tested \n? Pb-free lead plating， RoHS compliant;

Vergiga

威兆半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

文件：2.23498 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：1.55457 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

OptiMOSTM5 Power-Transistor, 60 V

Features ? Optimized for synchronous rectification ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? 175°C rated ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21 ? Higher solder joint reliability due to enlarged source interconnection

文件：906.71 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

OptiMOSTM Power-Transistor, 60 V

文件：1.02236 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

MOSFET - Power, Dual N-Channel 60 V, 11.9 m, 42 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：258.75 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體