MOSFET

N溝道增強(qiáng)型功率MOSFET采用Trench工藝針對(duì)更低Rds(on)和更高載流能力進(jìn)行優(yōu)化。該類產(chǎn)品非常適合要求高性能和耐用性的中低頻應(yīng)用，如電池保護(hù)等。 1.較低的導(dǎo)通損耗和開關(guān)損耗\n2.雪崩能力強(qiáng)\n3.100%雪崩測(cè)試;

Vergiga

威兆半導(dǎo)體

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For amplification of low-frequency output ■ Features ? Two elements incorporated into one package ? Reduction of the mounting area and assembly cost by one half

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PANASONIC

松下

High Q, high self-resonant frequency

Special Features ? High Q, high self-resonant frequency ? High voltage application ? Single layer or 3-pi universal wound ? Low cost ? Varnish coated ? Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C ? Current to cause 35°C maximum temperature rise

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ETCList of Unclassifed Manufacturers

未分類制造商

Networks

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BOURNS

伯恩斯

Networks

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BOURNS

伯恩斯