MOSFET

N溝道增強(qiáng)型功率MOSFET采用Trench工藝針對(duì)更低Rds(on)和更高載流能力進(jìn)行優(yōu)化。該類(lèi)產(chǎn)品非常適合要求高性能和耐用性的中低頻應(yīng)用，如PC/NB主板、負(fù)載開(kāi)關(guān)和無(wú)線(xiàn)充等。 1.較低的導(dǎo)通損耗和開(kāi)關(guān)損耗\n2.雪崩能力強(qiáng)\n3.100%雪崩測(cè)試;

Vergiga

威兆半導(dǎo)體

N-Channel MOSFET uses advanced trench technology

文件：1.37936 Mbytes 頁(yè)數(shù)：4 Pages

DOINGTER

杜因特

N-Channel MOSFET

? N-Channel\n? Enhancement mode\n? Low on-resistance RDS(on) @ VGS=4.5 V\n? Fast Switching and High efficiency\n? Pb-free lead plating; RoHS compliant;

Vergiga

威兆半導(dǎo)體

WorkWise Height-Adjustable Sit-Stand Desktop Workstation, 36 x 22 in. Monitor Platform

文件：170.88 Kbytes 頁(yè)數(shù)：3 Pages

TRIPPLITE

LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features ? 650-V 120-mΩ GaN power FET ? Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control ? Current-sense emulation with high bandwidth and high accuracy ? Cycle-by-cycle overcurrent protection ? Overtemperature protection with FLT pin reporting

文件：1.2679 Mbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features ? 650-V 120-mΩ GaN power FET ? Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control ? Current-sense emulation with high bandwidth and high accuracy ? Cycle-by-cycle overcurrent protection ? Overtemperature protection with FLT pin reporting

文件：1.33869 Mbytes 頁(yè)數(shù)：30 Pages

TI

德州儀器