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                >VP2106>規(guī)格書列表
                
    
            
    
                
    
                    
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    VP2106
    P-Channel Enhancement-Mode Vertical DMOS FETs
    
Advanced DMOS Technology 
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda
    文件：456.67 Kbytes 頁數(shù)：4 Pages
    SUTEX
    

    VP2106
    P-Channel Enhancement-Mode Vertical DMOS FET
    
General Description
The Supertex VP2106 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h
    文件：636.88 Kbytes 頁數(shù)：5 Pages
    SUTEX
    

    VP2106
    P-Channel Enhancement-Mode Vertical DMOS FET
    文件：755.93 Kbytes 頁數(shù)：14 Pages
    MICROCHIP
    微芯科技
    

    VP2106
    MOSFET, P-Channel Enhancement-Mode, -60V, 12 Ohm
    This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and  well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in  Free from secondary breakdown    \nLow power drive requirement    \nEase of paralleling    \nLow CISS and fast switching speeds    \nExcellent thermal stability    \nIntegral source-drain diode    \nHigh input impedance and high gain;
    Microchip
    微芯科技
    

    VP2106N3
    P-Channel Enhancement-Mode Vertical DMOS FETs
    
Advanced DMOS Technology 
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda
    文件：456.67 Kbytes 頁數(shù)：4 Pages
    SUTEX
    

    VP2106N3-G
    P-Channel Enhancement-Mode Vertical DMOS FET
    
General Description
The Supertex VP2106 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h
    文件：636.88 Kbytes 頁數(shù)：5 Pages
    SUTEX
    

    VP2106N3-G
    P-Channel Enhancement-Mode Vertical DMOS FET
    文件：755.93 Kbytes 頁數(shù)：14 Pages
    MICROCHIP
    微芯科技
    

    VP2106N3
    P-Channel Enhancement-Mode Vertical DMOS FETs
    Microchip
    微芯科技
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • BVdss min (V)：
      -60
    • Rds (on) max (Ohms)：
      12
    • Vgs(th) max (V)：
      -3.5
    • CISSmax (pF)：
      60
    • Packages：
      3\\TO-92
    
            
    
        
    
            
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    更多VP2106供應(yīng)商
            更新時(shí)間2026-1-22 14:16:00
        
    
        
    
          
    
            
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