OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

文件：370.03 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II - 全自動保護(hù)功率MOSFET

The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh env ? Linear current limitation \n? Thermal shutdown \n? Short circuit protection \n? Integrated clamp \n? Low current drawn from input pin \n? Diagnostic feedback through input pin \n? ESD protection \n? Direct access to the gate of the Power MOSFET (analog driving) \n? Compatible with standard Power M;

ST

意法半導(dǎo)體

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT） 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動器 描述：IC MOSFET OMNIFET II 8-SOIC

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

文件：370.03 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導(dǎo)體