OMNIFET III fully protected low-side driver for automotive applications

Features ? AEC-Q100 qualified ? Drain current: 3.5 A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? Compliant with European directive 2002/95/EC ? Specially intended for R10W or

文件：631.81 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

OMNIFET III fully protected low-side driver

文件：471.28 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

OMNIFET III fully protected low-side driver for automotive applications

Features ? AEC-Q100 qualified ? Drain current: 3.5 A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? Compliant with European directive 2002/95/EC ? Specially intended for R10W or

文件：631.81 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導體

OMNIFET III全保護下橋臂驅(qū)動器

The VNLD5160-E is a monolithic device made using STMicroelectronics? VIPower? technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects t ? AEC-Q100 qualified \n? Drain current: 3.5 A \n? ESD protection \n? Overvoltage clamp \n? Thermal shutdown \n? Current and power limitation \n? Very low standby current \n? Very low electromagnetic susceptibility \n? Compliant with European directive 2002/95/EC \n? Specially intended for R10W or 2x;

ST

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