OMNIFET III fully protected low-side driver for automotive applications

Features ? AEC-Q100 qualified ? Drain current: 13 A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? In compliance with the 2002/95/EC European directive

文件：542.78 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III fully protected low-side driver

文件：423.99 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III fully protected low-side driver for automotive applications

Features ? AEC-Q100 qualified ? Drain current: 13 A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? In compliance with the 2002/95/EC European directive

文件：542.78 Kbytes 頁數(shù)：20 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III全保護(hù)下橋臂驅(qū)動(dòng)器

The VNLD5090-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the ? AEC-Q100 qualified \n? Drain current: 13 A \n? ESD protection \n? Overvoltage clamp \n? Thermal shutdown \n? Current and power limitation \n? Very low standby current \n? Very low electromagnetic susceptibility \n? In compliance with the 2002/95/EC European directive;

ST

意法半導(dǎo)體