OMNIFET III fully protected low-side driver

Features ? Automotive qualified ? Drain current: 3.5A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? In compliance with the 2002/95/EC European directive ? Open drain status ou

文件：542.58 Kbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III fully protected low-side driver

文件：502.78 Kbytes 頁數(shù)：26 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III fully protected low-side driver

Features ? Automotive qualified ? Drain current: 3.5A ? ESD protection ? Overvoltage clamp ? Thermal shutdown ? Current and power limitation ? Very low standby current ? Very low electromagnetic susceptibility ? In compliance with the 2002/95/EC European directive ? Open drain status ou

文件：542.58 Kbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET III全保護(hù)下橋臂驅(qū)動(dòng)器

The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics?VIPower?Technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short circuit. Output current limit ? Automotive qualified \n? Drain current:3.5A \n? ESD protection \n? Overvoltage clamp \n? Thermal shutdown \n? Current and power limitation? Very low standby current \n? Very low electromagnetic susceptibility \n? In compliance with the 2002/95/EC European directive \n? Open drain status output (VN;

ST

意法半導(dǎo)體