??MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower? technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

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STMICROELECTRONICS

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OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower? technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

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STMICROELECTRONICS

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OMNIFET II全自動保護(hù)功率MOSFET

The VNP35N07-E, VNB35N07-E and VNV35NV07-E are monolithic devices made using STMicroelectronics VIPower?technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.\n\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in hars ? Automotive qualified \n? Linear current limitation \n? Thermal shutdown \n? Short circuit protection \n? Integrated clamp \n? Low current drawn from input pin? Diagnostic feedback through input pin \n? ESD protection \n? Direct access to the gate of the Power MOSFET (analog driving) \n? Compatible;

ST

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Package：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動器 描述：IC PWR DRIVER N-CHAN 1:1 D2PAK

STMICROELECTRONICS

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