SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY

The VN920SP-E is a monolithic device designed in STMicroelectronics? VIPower? M0-3 technology. The VN920SP-E is intended for driving any type of load with one side connected to ground. The active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility ? ECOPACK?: lead free and RoHS compliant\n? Automotive Grade: compliance with AEC guidelines\n? Very low standby current\n? CMOS compatible input\n? Proportional load current sense? Current sense disable\n? Thermal shutdown protection and diagnosis\n? Undervoltage shutdown\n? Overvoltage clamp\n? Lo;

ST

意法半導體

HIGH SIDE DRIVER

DESCRIPTION The VN920SP-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table).

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STMICROELECTRONICS

意法半導體

Package：PowerSO-10 裸露底部焊盤；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICS

意法半導體

High-side driver

DESCRIPTION The VN920SP-E is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table).

文件：402.94 Kbytes 頁數(shù)：27 Pages

STMICROELECTRONICS

意法半導體

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

Description The VND920 is a double chip device designed in STMicroelectronics VIPower M0-3 technology. The VND920 is intended for driving any type of load with one side connected to ground. The active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compa

文件：324.17 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

Double channel high-side solid-state relay

Features ■ CMOS compatible input ■ Proportional load current sense ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp ■ Thermal shutdown ■ Current limitation ■ Protection against loss of ground and loss of VCC ■ Very low standby power dissipation ■ Rev

文件：373.72 Kbytes 頁數(shù)：26 Pages

STMICROELECTRONICS

意法半導體