N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

文件：631.72 Kbytes 頁數：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

文件：631.72 Kbytes 頁數：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

文件：631.72 Kbytes 頁數：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

文件：631.72 Kbytes 頁數：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and po

文件：631.72 Kbytes 頁數：6 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：242.65 Kbytes 頁數：4 Pages

SUTEX

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

文件：41.82 Kbytes 頁數：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

FEATURES ?Low rDS(on) APPLICATIONS ?Switching ?Amplification

文件：24.51 Kbytes 頁數：2 Pages

CALOGIC

N CHANNEL ENHANCEMENT MODE D MOS POWER FETS

[TOPAS SEMICONDUCTOR] FEATURES ■ High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances ■ Extended Safe Operating Area APPLICATIONS ■ High-Speed Pulse Amplifiers ■ Logic Buffers ■ Line Drivers ■ Solid-State Relays ■ Motor Controls ■ Power Supplies

文件：63.85 Kbytes 頁數：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features ? BVDSS > 60V ? RDS(on) ≤ 5Ω @ VGS= 10V ? ID = 270mA Maximum Continuous Drain Current ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability

文件：38.98 Kbytes 頁數：1 Pages

DIODES

美臺半導體