Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：133.49 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：148.1 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：138.8 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：146.27 Kbytes 頁(yè)數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package

文件：133.49 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

肖特基二極管與整流器 5A 200V Schottky TrenchMOS

Vishay

威世

Package：TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 5A 200V TO-262AA

Vishay General Semiconductor - Diodes Division