Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? TJ 200 °C max. in solar bypass mode application ? Material categorization: for definitions of compliance please see www.vishay

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VISHAYVishay Siliconix

威世威世科技公司

Package：TO-262-3，長(zhǎng)引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 30A 45V TO-262AA

Vishay General Semiconductor - Diodes Division

Schottky Rectifier

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes,

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VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 15 A

FEATURES ? 150 °C TJ operation ? Low forward voltage drop ? High frequency operation ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? Guard ring for enhanced ruggedness and long term reliability ? Compliant to RoHS Directive 20

文件：137.87 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

High frequency operation

文件：158.15 Kbytes 頁(yè)數(shù)：7 Pages

VISHAYVishay Siliconix

威世威世科技公司