Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum ?? peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per ?? JESD 22-B106 (for TO-220AB, ITO-2

文件：151.01 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件：204.44 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Trench MOS Barrier Schottky Rectifier

文件：148.38 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：148.38 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：帶盒（TB） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 80V 10A TO262AA

Vishay General Semiconductor - Diodes Division