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                >VIT1060C>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          VIT1060C
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and
          文件：130.58 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-E3
          Trench MOS Schottky technology
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an
          文件：156.9 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-E3
          Dual High Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
? Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB,
          文件：202.1 Kbytes 頁數(shù)：6 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060CHM3
          Trench MOS Schottky technology
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
T
          文件：133.87 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060CHM3-4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and
          文件：130.58 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-M3
          Trench MOS Schottky technology
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
T
          文件：133.87 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-M3-4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and
          文件：130.58 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-E3/4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          文件：173.74 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C-E3SLASH4W
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier
          文件：173.74 Kbytes 頁數(shù)：5 Pages
          VISHAYVishay Siliconix
          威世威世科技公司
          

          VIT1060C
          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
           Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;
          Vishay
          威世
          

          
            
          
		
        
          
            
          
                
          詳細參數(shù)
          
            
          
            
            
            	
          • 型號：
            VIT1060C
          • 制造商：
            VISHAY 
          • 制造商全稱：
            Vishay Siliconix 
          • 功能描述：
            Dual High-Voltage Trench MOS Barrier Schottky Rectifier 
          
            
          
        
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
          



          VISHAY/威世
          		

          23+
          		

          TO262
          		

          11200
          		

          原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          		
詢價
          

          



          VISHAY
          		

          25+
          		

          TO-262
          		

          3675
          		

          就找我吧!--邀您體驗愉快問購元件!
          		
詢價
          

          



          Vishay Semiconductor Diodes Di
          		

          22+
          		

          TO262AA
          		

          9000
          		

          原廠渠道,現(xiàn)貨配單
          		
詢價
          

          



          Vishay General Semiconductor -
          		

          25+
          		

          TO-262-3 長引線 I?Pak TO-26
          		

          9350
          		

          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          		
詢價
          

          



          		

          24+
          		

          N/A
          		

          69000
          		

          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          		
詢價
          

            
          
        
          
        
          更多VIT1060C供應商
            更新時間2026-1-20 11:09:00
        
          
        
          
          
          
            
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