| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件:168.07 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in 文件:150.03 Kbytes 頁數(shù):4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件:168.07 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件:168.07 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件:149.51 Kbytes 頁數(shù):4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件:166.33 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High efficiency operation FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件:167.09 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件:166.33 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Compo 文件:166.33 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件:161.64 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號(hào):
VI101
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) | ||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價(jià) | ||
24+ |
N/A |
79000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Vishay General Semiconductor - |
25+ |
TO-262-3 長引線 I?Pak TO-26 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
Vishay(威世) |
25+ |
TO-262AA |
500000 |
源自原廠成本,高價(jià)回收工廠呆滯 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VICOR |
23+ |
模塊 |
900 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢! |
詢價(jià) | ||
VICOR |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) |
相關(guān)規(guī)格書
更多- VI10150C-E3/4W
- VI-201-DP-RC-S
- VI20202G-M3/4W
- VI-213-CV
- VI-24
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- VI-262-CU
- VI-26L-CU
- VI-2W3-CV
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相關(guān)庫存
更多- VI-201-DP-FC-S
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- VIBLSD1-S24-S15-SIP
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- VIBLSD1-S5-S12-SIP
- VIBLSD1-S5-S5-DIP
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- VI-J60-CW
- VI-J61-CX
- VI-J63-CW
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- VI-JW2-CW
- VI-LUL-IU
- VIM-503-DP-FC-S-HV
- VIM-828-DP13.2-RC-S-LV
- VIM-878-DP-FC-S-LV
- VIM-878-DP-RC-S-LV
- VIP2B226S08B

