Trench MOS Schottky technology

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and

文件：157.03 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

文件：202.27 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：173.59 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-3 全封裝，隔離接片；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 60V ITO220

Vishay General Semiconductor - Diodes Division