| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VFT2080C | Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：79.21 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
VFT2080C | Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：127.73 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：127.73 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：204.62 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Schottky technology FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：158.85 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, an 文件：79.21 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：76.28 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：163.74 Kbytes 頁數(shù)：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.69 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：148.69 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細參數(shù)
- 型號：
VFT2080C
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Dual Trench MOS Barrier Schottky Rectifier
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VISHAY/威世 |
24+ |
TO-220F |
60000 |
全新原裝現(xiàn)貨 |
詢價 | ||
VISHAY/威世 |
TO220F |
60000 |
全新、原裝 |
詢價 | |||
VISHAY |
原廠封裝 |
9800 |
原裝進口公司現(xiàn)貨假一賠百 |
詢價 | |||
22+ |
TO220F-3 |
20000 |
只做原裝 |
詢價 | |||
VSHAY |
25+ |
TO-220 |
6000 |
普通 |
詢價 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
VISHAY/威世 |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 全封裝 隔離接片 |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 |
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