Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology Gen 2 ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-2

文件：207.93 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：157.12 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：168.41 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Trench MOS Schottky technology Gen 2\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-220-3 全封裝，隔離接片；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTKY 200V 10A ITO220AB

Vishay General Semiconductor - Diodes Division