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          首頁 >VBT6045CBP-E3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VBT6045CBP-E3

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? TJ 200 °C max. in solar bypass mode application ? Material categorization: For definitions of compliance please

          文件:93.4 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          文件:83.26 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

          分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

          Vishay

          威世

          VBT6045CBP-E3_V01

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? TJ 200 °C max. in solar bypass mode application ? Material categorization: For definitions of compliance please

          文件:93.4 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3SLASH4W

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

          ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? TJ 200 °C max. in solar bypass mode application

          文件:92.76 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3SLASH4W

          High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

          ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

          文件:216.59 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3SLASH8W

          High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

          ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-2

          文件:216.59 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3SLASH8W

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

          ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? TJ 200 °C max. in solar bypass mode application

          文件:92.76 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3/4W

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          文件:92.76 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VBT6045CBP-E3/4W

          Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          文件:216.59 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號:

            VBT6045CBP-E3

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

          供應(yīng)商型號品牌批號封裝庫存備注價格
          VISHAY/威世
          2447
          TO-263
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          VISHAY/威世
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          VIS
          22+
          TO-263AB
          6000
          十年配單,只做原裝
          詢價
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價
          VIS
          25+
          TO-263AB
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          VISHAY/威世
          24+
          TO-263
          60000
          全新原裝現(xiàn)貨
          詢價
          VISHAY
          25+
          TO-263
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          Vishay(威世)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
          詢價
          VISHAY
          23+
          TO-263AB
          50000
          原裝正品 支持實單
          詢價
          24+
          N/A
          46000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          更多VBT6045CBP-E3供應(yīng)商 更新時間2026-1-20 15:01:00
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