| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
VBT4045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：75.55 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：102.67 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：315.39 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：102.67 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：102.87 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：315.4 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：102.87 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：83.1 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：81.26 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：89.84 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號：
VBT4045C
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
VISHAY |
25+ |
TO-263 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-263AB |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
Vishay Semiconductor Diodes Di |
23+ |
TO263AB |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
60000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
Vishay General Semiconductor - |
25+ |
TO-263-3 D?Pak(2 引線 + 接片 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
Vishay(威世) |
24+ |
N/A |
11800 |
可配單提供樣品 |
詢價 | ||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原裝,詳情請咨詢 |
詢價 |
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