N-Channel 700V(D-S) Super Junction Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.04579 Mbytes 頁數(shù)：12 Pages

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Power MOSFET

FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction

文件：743.74 Kbytes 頁數(shù)：9 Pages

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N-Channel 700V(D-S) Super Junction Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.04579 Mbytes 頁數(shù)：12 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 700V(D-S) Super Junction Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.04579 Mbytes 頁數(shù)：12 Pages

VBSEMI

微碧半導(dǎo)體