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                >VBMB165R02>規(guī)格書列表
                
          
            
          
                
          
                    
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          VBMB165R02
          N-Channel 650V (D-S) Power MOSFET
          文件：776.28 Kbytes 頁數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          VBMB165R02S
          N-Channel 650V (D -S) Super Junction Power MOSFET
          
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
          文件：1.12135 Mbytes 頁數(shù)：12 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          VBE165R02
          N-Channel 650 V (D-S) MOSFET
          文件：765.82 Kbytes 頁數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          VBE165R02
          N-Channel 650 V (D-S) MOSFET
          
FEATURES
? Low Gate Charge Qg Results in Simple Drive
Requirement
? Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
? Fully Characterized Capacitance and Avalanche Voltage
and Current
? Compliant to RoHS directive 2002/95/EC
          文件：780.29 Kbytes 頁數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          VBE165R02S
          N-Channel 650V (D -S) Super Junction Power MOSFET
          
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
          文件：1.12135 Mbytes 頁數(shù)：12 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          
            
          
		
          
            
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