N-Channel 40-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：612.04 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

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N-Channel 4 0-V (D-S) MOSFET

文件：567.31 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

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N-Channel 40-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

文件：612.04 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

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N-Channel 40 V (D-S) MOSFET

文件：635.85 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

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Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 頁(yè)數(shù)：18 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 頁(yè)數(shù)：18 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司