絲印：VB245；Package：TVSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/vb245/marking.html">VB245；Package：TVSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲印：VB245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/vb245/marking.html">VB245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/vb245/marking.html">VB245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲印：VB245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/vb245/marking.html">VB245；Package：TSSOP；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3.4 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II DESCRIPTION/ORDERING INFORMATION This oct

文件：679.61 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nMeets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) package)\nLow forward voltage drop, low power losses;

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世