基本開關(guān)(微動開關(guān))

? 工作頻率 (機械):\n? 工作頻率 (電氣):\n? 接觸電阻:\n? 絶緣電阻(at 500 VDC)\n? 機械壽命\n? 電氣壽命\n???3A~26A Min.10,000 Operations\n;

ZIPPY

新巨

絲印：VA10；Package：TVSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/va10/marking.html">VA10；Package：TVSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/va10/marking.html">VA10；Package：TSSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲印：VA10；Package：TSSOP；TRIPLE 3-INPUT POSITIVE-NAND GATE

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 3 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) D

文件：591.53 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/va125/marking.html">VA125；Package：TVSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/va125/marking.html">VA125；Package：TVSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/va125/marking.html">VA125；Package：TVSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲印：VA125；Package：TSSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

絲印：VA125；Package：TSSOP；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

FEATURES · Operates from 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Latch-up Performance Exceeds 250 mA Per JESD 17 · ESD Performance Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101)

文件：595.21 Kbytes 頁數(shù)：18 Pages

TI

德州儀器